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SSM6J213FE(TE85L,F

SSM6J213FE(TE85L,F

Image is for reference, please contact us to get the real picture

Part No :

SSM6J213FE(TE85L,F

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P CH 20V 2.6A ES6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
873587 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
PDF
SSM6J213FE(TE85L,F PDF
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:103mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ES6
Package / Case:SOT-563, SOT-666
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