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IPAN80R280P7XKSA1

IPAN80R280P7XKSA1

MOSFET N-CH 800V 17A TO220

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IPAN80R280P7XKSA1

IPAN80R280P7XKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPAN80R280P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 17A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10328 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IPAN80R280P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 500 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPAN80R280P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPAN80R280P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPAN80R280P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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