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RW1E025RPT2CR

RW1E025RPT2CR

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RW1E025RPT2CR

RW1E025RPT2CR

Image is for reference, please contact us to get the real picture

Part No :

RW1E025RPT2CR

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 30V 2.5A 6WEMT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18274 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
RW1E025RPT2CR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:75mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 10 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WEMT
Package / Case:SOT-563, SOT-666
RW1E025RPT2CR is available at GangBo-ic.com, Please review product page below for detailed information, including RW1E025RPT2CR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RW1E025RPT2CR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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