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IPB60R040C7ATMA1

IPB60R040C7ATMA1

MOSFET N-CH 650V 50A TO263-3

IPB60R040C7ATMA1

IPB60R040C7ATMA1

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Part No :

IPB60R040C7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 50A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10774 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPB60R040C7ATMA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id:4V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4340 pF @ 400 V
FET Feature:-
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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