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IPU80R2K8CEAKMA1

IPU80R2K8CEAKMA1

MOSFET N-CH 800V 1.9A TO251-3

IPU80R2K8CEAKMA1

IPU80R2K8CEAKMA1

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Part No :

IPU80R2K8CEAKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 1.9A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10999 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPU80R2K8CEAKMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 100 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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