MOSFET P-CH 200V 26A TO3P
Type | Description |
---|---|
Series: | PolarP™ |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 170mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 56 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2740 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMT10H072LFDFQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 4A 6UDFN |
|
SSM3J356R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -60V -2A SOT23F |
|
BSH112,235Rochester Electronics |
MOSFET N-CH 60V 300MA TO236AB |
|
FQB5N60TMRochester Electronics |
MOSFET N-CH 600V 5A D2PAK |
|
NTMFS4849NT1GRochester Electronics |
MOSFET N-CH 30V 10.2A/71A 5DFN |
|
PMCM6501VNE023Rochester Electronics |
PMCM6501 N-CHANNEL, MOSFET |
|
SCTW100N65G2AGSTMicroelectronics |
SICFET N-CH 650V 100A HIP247 |
|
RM5N700LDRectron USA |
MOSFET N-CHANNEL 700V 5A TO252-2 |
|
IRFR024NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
|
IRF6727MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A DIRECTFET |
|
IXTA28P065TWickmann / Littelfuse |
MOSFET P-CH 65V 28A TO263 |
|
STB18N65M5STMicroelectronics |
MOSFET N-CH 650V 15A D2PAK |
|
STB200NF03T4STMicroelectronics |
MOSFET N-CH 30V 120A D2PAK |