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SCTW100N65G2AG

SCTW100N65G2AG

SICFET N-CH 650V 100A HIP247

SCTW100N65G2AG

SCTW100N65G2AG

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Part No :

SCTW100N65G2AG

Manufacturer
STMicroelectronics
Description
SICFET N-CH 650V 100A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11549 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id:5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:162 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3315 pF @ 520 V
FET Feature:-
Power Dissipation (Max):420W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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