MOSFET N-CH 60V 300MA TO236AB
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 40 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 830mW (Tc) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
FQB5N60TMRochester Electronics |
MOSFET N-CH 600V 5A D2PAK |
![]() |
NTMFS4849NT1GRochester Electronics |
MOSFET N-CH 30V 10.2A/71A 5DFN |
![]() |
PMCM6501VNE023Rochester Electronics |
PMCM6501 N-CHANNEL, MOSFET |
![]() |
SCTW100N65G2AGSTMicroelectronics |
SICFET N-CH 650V 100A HIP247 |
![]() |
RM5N700LDRectron USA |
MOSFET N-CHANNEL 700V 5A TO252-2 |
![]() |
IRFR024NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
![]() |
IRF6727MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A DIRECTFET |
![]() |
IXTA28P065TWickmann / Littelfuse |
MOSFET P-CH 65V 28A TO263 |
![]() |
STB18N65M5STMicroelectronics |
MOSFET N-CH 650V 15A D2PAK |
![]() |
STB200NF03T4STMicroelectronics |
MOSFET N-CH 30V 120A D2PAK |
![]() |
IRFR3710ZTRLPBFRochester Electronics |
IRFR3710 - 12V-300V N-CHANNEL PO |
![]() |
RM35N30DFRectron USA |
MOSFET N-CHANNEL 30V 35A 8DFN |
![]() |
MCH3406-TL-ERochester Electronics |
N-CHANNEL POWER MOSFET |