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FQB5N60TM

FQB5N60TM

MOSFET N-CH 600V 5A D2PAK

FQB5N60TM

FQB5N60TM

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Part No :

FQB5N60TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10910 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 21 - Dec 25 2024
PDF
FQB5N60TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB5N60TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB5N60TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB5N60TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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