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TPN4R806PL,L1Q

TPN4R806PL,L1Q

MOSFET N-CH 60V 72A 8TSON

TPN4R806PL,L1Q

TPN4R806PL,L1Q

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Part No :

TPN4R806PL,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 72A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16260 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:72A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2770 pF @ 30 V
FET Feature:-
Power Dissipation (Max):630mW (Ta), 104W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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