MOSFET N-CH 40V 195A D2PAK
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 1.6mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 324 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10820 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 294W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM6J502NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A 6UDFNB |
|
BSZ013NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 32A/40A TSDSON |
|
AUIRFZ48NRochester Electronics |
MOSFET N-CH 55V 69A TO220AB |
|
IRFP22N60KPBFVishay / Siliconix |
MOSFET N-CH 600V 22A TO247-3 |
|
ZXMN6A11GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.1A SOT223 |
|
IPL60R360P6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11.3A 8THINPAK |
|
FDPF770N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 10A TO220F |
|
RQ6E085BNTCRROHM Semiconductor |
MOSFET N-CH 30V 8.5A SOT457 |
|
IRF840ALPBFVishay / Siliconix |
MOSFET N-CH 500V 8A I2PAK |
|
BUK7905-40AI,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.005OHM, 1 |
|
NTB75N03RT4Rochester Electronics |
MOSFET N-CH 25V 9.7A/75A D2PAK |
|
FDMC86102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/20A POWER33 |
|
IRF7853TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.3A 8SO |