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FQD4N25TM

FQD4N25TM

MOSFET N-CH 250V 3A DPAK

FQD4N25TM

FQD4N25TM

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Part No :

FQD4N25TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 3A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
62748 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
FQD4N25TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N25TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD4N25TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD4N25TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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