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IPD60R600P6ATMA1

IPD60R600P6ATMA1

MOSFET N-CH 600V 7.3A TO252-3

IPD60R600P6ATMA1

IPD60R600P6ATMA1

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Part No :

IPD60R600P6ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 7.3A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10162 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
IPD60R600P6ATMA1 PDF
Type Description
Series:CoolMOS™ P6
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:557 pF @ 100 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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