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IPD30N06S2L23ATMA3

IPD30N06S2L23ATMA3

MOSFET N-CH 55V 30A TO252-31

5055700401

5055700401

CONN 2.0W B SINGLE REC HSG

IPD30N06S2L23ATMA3

IPD30N06S2L23ATMA3

Image is for reference, please contact us to get the real picture

Part No :

IPD30N06S2L23ATMA3

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 30A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10158 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
IPD30N06S2L23ATMA3 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1091 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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