MOSFET N-CH 1200V 3A TO220AB
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 39 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1050 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMFS4922NET1GRochester Electronics |
MOSFET N-CH 30V 17.1A/147A 5DFN |
|
IPD30N06S2-15Rochester Electronics |
MOSFET N-CH 55V 30A TO252-3 |
|
IRFU430BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFBE30SPBFVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
|
DMT10H015LCG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 9.4A/34A 8DFN |
|
IRF100B201IR (Infineon Technologies) |
MOSFET N-CH 100V 192A TO220AB |
|
BSP179H6327XTSA1Rochester Electronics |
MOSFET N-CH 400V 210MA SOT223-4 |
|
RJK0656DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 40A LFPAK |
|
SIHA100N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 30A TO220 |
|
FCPF150N65FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 14.9A TO220F |
|
AOTF6N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 6A TO220-3F |
|
NTB6412ANGRochester Electronics |
MOSFET N-CH 100V 58A D2PAK |
|
DMT6015LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI3333 |