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NVB5860NLT4G

NVB5860NLT4G

MOSFET N-CH 60V 220A D2PAK-3

NVB5860NLT4G

NVB5860NLT4G

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Part No :

NVB5860NLT4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 220A D2PAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14040 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
NVB5860NLT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:220A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13.216 pF @ 25 V
FET Feature:-
Power Dissipation (Max):283W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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