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SI8483DB-T2-E1

SI8483DB-T2-E1

MOSFET P-CH 12V 16A 6MICRO FOOT

SI8483DB-T2-E1

SI8483DB-T2-E1

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Part No :

SI8483DB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 16A 6MICRO FOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15938 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI8483DB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:26mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1840 pF @ 6 V
FET Feature:-
Power Dissipation (Max):2.77W (Ta), 13W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-Micro Foot™ (1.5x1)
Package / Case:6-UFBGA
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