N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK9A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9A TO220SIS |
|
IPP50R500CEXKSA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
FDBL0200N100Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 300A 8HPSOF |
|
STW68N65DM6-4AGSTMicroelectronics |
MOSFET N-CH 650V 72A TO247-4 |
|
FQB3N60CTMRochester Electronics |
MOSFET N-CH 600V 3A D2PAK |
|
IRF6646TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 12A DIRECTFET |
|
RM4N650TIRectron USA |
MOSFET N-CHANNEL 650V 4A TO220F |
|
TK39N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 38.8A TO247 |
|
SIHS36N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 36A SUPER-247 |
|
2SK3564(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 3A TO220SIS |
|
NTHL050N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 58A TO247-3 |
|
IPP80N06S208AKSA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STP9NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 7A TO220FP |