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RM4N650TI

RM4N650TI

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RM4N650TI

RM4N650TI

Image is for reference, please contact us to get the real picture

Part No :

RM4N650TI

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 4A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
032603 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 50 V
FET Feature:-
Power Dissipation (Max):28.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
RM4N650TI is available at GangBo-ic.com, Please review product page below for detailed information, including RM4N650TI price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM4N650TI to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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