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TK9A60D(STA4,Q,M)

TK9A60D(STA4,Q,M)

MOSFET N-CH 600V 9A TO220SIS

TK9A60D(STA4,Q,M)

TK9A60D(STA4,Q,M)

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Part No :

TK9A60D(STA4,Q,M)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 9A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
972597 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
TK9A60D(STA4,Q,M) PDF
Type Description
Series:π-MOSVII
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:830mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
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