RES SMD 1.8K OHM 5% 1/4W 1206
RES 34.8 OHM 0.5% 1/4W 0805
MOSFET N-CH 600V 38.8A TO247
INSULATION DISPLACEMENT TERMINAL
Type | Description |
---|---|
Series: | DTMOSIV |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 38.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 74mOhm @ 19.4A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs: | 135 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4100 pF @ 300 V |
FET Feature: | - |
Power Dissipation (Max): | 270W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHS36N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 36A SUPER-247 |
|
2SK3564(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 3A TO220SIS |
|
NTHL050N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 58A TO247-3 |
|
IPP80N06S208AKSA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STP9NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 7A TO220FP |
|
SI7145DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
|
SQD07N25-350H_GE3Vishay / Siliconix |
MOSFET N-CH 250V 7A TO252AA |
|
IRFR120TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
SK8403180LPanasonic |
MOSFET N-CH 30V 12A 8HSSO |
|
BUK9E3R2-40E,127Rochester Electronics |
MOSFET N-CH 40V 100A I2PAK |
|
PMN48XPA115Rochester Electronics |
P-CHANNEL MOSFET |
|
BSC100N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDI030N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A I2PAK |