MOSFET N-CH 200V 2.6A DPAK
HEX STANDOFF M3X0.5 STEEL 17MM
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 1.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 140 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRF9Z24STRLPBFVishay / Siliconix |
MOSFET P-CH 60V 11A D2PAK |
![]() |
ZVN4310GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.67A SOT223 |
![]() |
MCH3382-TL-WRochester Electronics |
MOSFET P-CH 12V 2A SC70FL/MCPH3 |
![]() |
FCH150N65F-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A TO247 |
![]() |
FDW262PRochester Electronics |
MOSFET P-CH 20V 4.5A 8TSSOP |
![]() |
TSM110NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 12A/54A 8PDFN |
![]() |
XPH4R714MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A 8SOP |
![]() |
FDS8672SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
![]() |
FQI12N60TURochester Electronics |
MOSFET N-CH 600V 10.5A I2PAK |
![]() |
DMT3009UFVW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.6A/30A PWRDI |
![]() |
SSS10N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
STD6N95K5STMicroelectronics |
MOSFET N-CH 950V 9A DPAK |
![]() |
IRF5210LPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 38A TO262 |