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TSM110NB04CR RLG

TSM110NB04CR RLG

Image is for reference, please contact us to get the real picture

Part No :

TSM110NB04CR RLG

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 40V 12A/54A 8PDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
TSM110NB04CR RLG PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1443 pF @ 20 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PDFN (5x6)
Package / Case:8-PowerTDFN
TSM110NB04CR RLG is available at GangBo-ic.com, Please review product page below for detailed information, including TSM110NB04CR RLG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM110NB04CR RLG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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