MOSFET N-CH 650V 24A TO247
12-FIBER OS2 FIBER INDOOR TRUNK,
Type | Description |
---|---|
Series: | SuperFET® II |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.4mA |
Gate Charge (Qg) (Max) @ Vgs: | 94 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3737 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 298W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 Long Leads |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDW262PRochester Electronics |
MOSFET P-CH 20V 4.5A 8TSSOP |
|
TSM110NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 12A/54A 8PDFN |
|
XPH4R714MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A 8SOP |
|
FDS8672SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
FQI12N60TURochester Electronics |
MOSFET N-CH 600V 10.5A I2PAK |
|
DMT3009UFVW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.6A/30A PWRDI |
|
SSS10N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD6N95K5STMicroelectronics |
MOSFET N-CH 950V 9A DPAK |
|
IRF5210LPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 38A TO262 |
|
IRFS4310TRRPBFRochester Electronics |
MOSFET N-CH 100V 130A TO263-3-2 |
|
SIR186DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
SI8808DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 30V 4MICROFOOT |
|
AO7401Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 1.4A SC70-3 |