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IRF5210LPBF

IRF5210LPBF

MOSFET P-CH 100V 38A TO262

2266604-1

2266604-1

OC-AT-S-FM-063F091F-752-1167

IRF5210LPBF

IRF5210LPBF

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Part No :

IRF5210LPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 100V 38A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10848 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRF5210LPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRF5210LPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF5210LPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF5210LPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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