MOSFET N-CH 1700V 2A TO268
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1700 V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 6.5Ohm @ 1A, 0V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3650 pF @ 25 V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 568W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
XPN9R614MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 40A 8TSON |
|
BSP320SL6327Rochester Electronics |
SMALL-SIGNAL N-CHANNEL MOSFET |
|
RJK1560DPP-M0#T2Rochester Electronics |
MOSFET N-CH 150V 20A TO220FL |
|
BSC882N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQ9407EY-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 4.6A 8SOIC |
|
IRFI630GPBFVishay / Siliconix |
MOSFET N-CH 200V 5.9A TO220-3 |
|
RSU002P03T106ROHM Semiconductor |
MOSFET P-CH 30V 250MA UMT3 |
|
FDZ3N513ZTRochester Electronics |
MOSFET P-CH 30V 1.1A 4WLCSP |
|
FDMC86106LZRochester Electronics |
MOSFET N-CH 100V 3.3A POWER33 |
|
NDT2955Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.5A SOT-223-4 |
|
NTTFS4932NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/79A 8WDFN |
|
FDP8030LRochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
FDP7042LRochester Electronics |
N-CHANNEL POWER MOSFET |