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FDZ3N513ZT

FDZ3N513ZT

MOSFET P-CH 30V 1.1A 4WLCSP

FDZ3N513ZT

FDZ3N513ZT

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Part No :

FDZ3N513ZT

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 30V 1.1A 4WLCSP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
25469 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
FDZ3N513ZT PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.1A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:462mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 4.5 V
Vgs (Max):+5.5V, -300mV
Input Capacitance (Ciss) (Max) @ Vds:85 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-WLCSP (1x1)
Package / Case:4-XFBGA, WLCSP
FDZ3N513ZT is available at GangBo-ic.com, Please review product page below for detailed information, including FDZ3N513ZT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDZ3N513ZT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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