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FDMC86106LZ

FDMC86106LZ

MOSFET N-CH 100V 3.3A POWER33

FDMC86106LZ

FDMC86106LZ

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Part No :

FDMC86106LZ

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 3.3A POWER33
Catalog
Transistors - FETs, MOSFETs - Single
Availability
200808 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
FDMC86106LZ PDF
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:103mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.3W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
FDMC86106LZ is available at GangBo-ic.com, Please review product page below for detailed information, including FDMC86106LZ price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMC86106LZ to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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