MOSFET N-CH 30V 80A TO220-3
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10.5 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 187W (Tc) |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDP7042LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
ZXMN6A08E6QTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2.8A SOT26 |
|
FDMC86160ET100Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 9A/43A POWER33 |
|
NVB150N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A D2PAK-3 |
|
SIHP15N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 15A TO220AB |
|
SI7117DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 2.17A PPAK |
|
SUM90N04-3M3P-E3Vishay / Siliconix |
MOSFET N-CH 40V 90A TO263 |
|
YJL2301F-F2-0000HF |
P-CH MOSFET 20V 2A SOT-23-3L |
|
IPD80R360P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 13A TO252-3 |
|
IXTK170P10PWickmann / Littelfuse |
MOSFET P-CH 100V 170A TO264 |
|
BSP170PL6327HTSA1Rochester Electronics |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
STD15N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 11A DPAK |
|
PSMN6R1-30YLD115Rochester Electronics |
N-CHANNEL POWER MOSFET |