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IPB100N06S2L05ATMA1

IPB100N06S2L05ATMA1

MOSFET N-CH 55V 100A TO263-3-2

IPB100N06S2L05ATMA1

IPB100N06S2L05ATMA1

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Part No :

IPB100N06S2L05ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 100A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11747 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 30 - Nov 03 2025
PDF
IPB100N06S2L05ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5.66 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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