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IPAW60R600P7SXKSA1

IPAW60R600P7SXKSA1

MOSFET N-CH 600V 6A TO220

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IPAW60R600P7SXKSA1

IPAW60R600P7SXKSA1

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Part No :

IPAW60R600P7SXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 6A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
830383 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2024
PDF
IPAW60R600P7SXKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 400 V
FET Feature:-
Power Dissipation (Max):21W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPAW60R600P7SXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPAW60R600P7SXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPAW60R600P7SXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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