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FQB16N25CTM

FQB16N25CTM

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Part No :

FQB16N25CTM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 15.6A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10845 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
PDF
FQB16N25CTM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:270mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.08 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB16N25CTM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB16N25CTM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB16N25CTM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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