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FQI27N25TU

FQI27N25TU

POWER FIELD-EFFECT TRANSISTOR, 2

RP15-2405SAW

RP15-2405SAW

DC DC CONVERTER 5V 15W

FQI27N25TU

FQI27N25TU

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Part No :

FQI27N25TU

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
22978 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
FQI27N25TU PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.45 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI27N25TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI27N25TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI27N25TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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