MOSFET N-CH 20V 4A TSMT3
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 35mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 8 nC @ 4.5 V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 680 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSMT3 |
Package / Case: | SC-96 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IPB027N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
![]() |
TPW4R50ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 92A 8DSOP |
![]() |
NVTFS6H888NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 4.7A/12A 8WDFN |
![]() |
BSC052N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 95A TDSON |
![]() |
FDP045N10A-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 120A TO220-3 |
![]() |
IRF1104LPBFRochester Electronics |
MOSFET N-CH 40V 100A TO262 |
![]() |
ZXMP10A17GQTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 1.7A SOT223 |
![]() |
IPB60R950C6ATMA1Rochester Electronics |
MOSFET N-CH 600V 4.4A D2PAK |
![]() |
UPA2723UT1A-E1-AYRochester Electronics |
MOSFET N-CH 30V 33A 8DFN |
![]() |
STN1HNK60STMicroelectronics |
MOSFET N-CH 600V 400MA SOT223 |
![]() |
NTP60N06LGRochester Electronics |
MOSFET N-CH 60V 60A TO220AB |
![]() |
NTTFS4H05NTWGRochester Electronics |
MOSFET N-CH 25V 22.4A/94A 8WDFN |
![]() |
NTMSD6N303R2GRochester Electronics |
MOSFET N-CH 30V 6A 8SOIC |