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NTMSD6N303R2G

NTMSD6N303R2G

MOSFET N-CH 30V 6A 8SOIC

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ALM-GP001-TR1G

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NTMSD6N303R2G

NTMSD6N303R2G

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Part No :

NTMSD6N303R2G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 6A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
130000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
NTMSD6N303R2G PDF
Type Description
Series:FETKY™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 24 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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