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SIT1602BI-21-33S-50.000000E

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MEMS OSC XO 50.0000MHZ H/LV-CMOS

NVTFS6H888NTAG

NVTFS6H888NTAG

MOSFET N-CH 80V 4.7A/12A 8WDFN

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NVTFS6H888NTAG

NVTFS6H888NTAG

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Part No :

NVTFS6H888NTAG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 4.7A/12A 8WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15803000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:4.7A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:55mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.9W (Ta), 18W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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