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IPB60R950C6ATMA1

IPB60R950C6ATMA1

MOSFET N-CH 600V 4.4A D2PAK

KBPC10/15/2508FP

KBPC10/15/2508FP

1PH BRIDGE KBPC 800V 25A

IPB60R950C6ATMA1

IPB60R950C6ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB60R950C6ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 4.4A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
29004 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPB60R950C6ATMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
FET Feature:-
Power Dissipation (Max):37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R950C6ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB60R950C6ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB60R950C6ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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