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NTMS4N01R2

NTMS4N01R2

MOSFET N-CH 20V 3.3A 8SOIC

NTMS4N01R2

NTMS4N01R2

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Part No :

NTMS4N01R2

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 20V 3.3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17191 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 10 V
FET Feature:-
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
NTMS4N01R2 is available at GangBo-ic.com, Please review product page below for detailed information, including NTMS4N01R2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMS4N01R2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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