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BSZ014NE2LS5IFATMA1

BSZ014NE2LS5IFATMA1

MOSFET N-CH 25V 31A/40A TSDSON

BSZ014NE2LS5IFATMA1

BSZ014NE2LS5IFATMA1

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Part No :

BSZ014NE2LS5IFATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 31A/40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
29945 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
PDF
BSZ014NE2LS5IFATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 12 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
BSZ014NE2LS5IFATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ014NE2LS5IFATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ014NE2LS5IFATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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