N-CHANNEL SILICON MOSFET
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.56Ohm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 14.6 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 360 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FI(LS) |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMP21D6UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 580MA 3DFN |
|
SIDR622DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 64.6A PPAK |
|
IRFRC20PBFVishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
|
2V7002LT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT23-3 |
|
SI7423DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 7.4A PPAK1212-8 |
|
FQB20N06LTMRochester Electronics |
MOSFET N-CH 60V 21A D2PAK |
|
TPH1R306P1,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 100A 8SOP |
|
2N7000-D74ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
TK560A60Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7A TO220SIS |
|
RSR020N06TLROHM Semiconductor |
MOSFET N-CH 60V 2A TSMT3 |
|
HUF75339G3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN601WKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT323 |
|
DMP3026SFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.3A 6UDFN |