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TPH1R306P1,L1Q

TPH1R306P1,L1Q

MOSFET N-CH 60V 100A 8SOP

TPH1R306P1,L1Q

TPH1R306P1,L1Q

Image is for reference, please contact us to get the real picture

Part No :

TPH1R306P1,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 100A 8SOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
370237 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.28mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 170W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN
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