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SI8487DB-T1-E1

SI8487DB-T1-E1

MOSFET P-CH 30V 4MICROFOOT

SI8487DB-T1-E1

SI8487DB-T1-E1

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Part No :

SI8487DB-T1-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12614 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
SI8487DB-T1-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:31mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2240 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.1W (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-UFBGA
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