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FCP25N60N-F102

FCP25N60N-F102

Image is for reference, please contact us to get the real picture

Part No :

FCP25N60N-F102

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 25A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10581 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FCP25N60N-F102 PDF
Type Description
Series:SupreMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3.352 pF @ 100 V
FET Feature:-
Power Dissipation (Max):216W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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