MOSFET N-CH 30V 1.87A DFN1006-3
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 1.87A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 420mOhm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.65 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 37 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN1006-3 |
Package / Case: | SC-101, SOT-883 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD30N06S223ATMA1Rochester Electronics |
MOSFET N-CH 55V 30A TO252-3 |
|
IRFHM830TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 21A/40A PQFN |
|
AON1606Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 700MA 3DFN |
|
NTD5867NL-1GRochester Electronics |
MOSFET N-CH 60V 20A IPAK |
|
SI3493BDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 8A 6TSOP |
|
2N7002-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 115MA TO236 |
|
TSM085N03PQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 52A 8PDFN |
|
IXTP130N10TWickmann / Littelfuse |
MOSFET N-CH 100V 130A TO220AB |
|
IPW65R099CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO247-3-41 |
|
NTMFS5C410NLT1GRochester Electronics |
MOSFET N-CH 40V 46A/302A 5DFN |
|
IPD60R600CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4813N-1GRochester Electronics |
MOSFET N-CH 30V 7.6A/40A IPAK |
|
MCU90N06A-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DPAK |