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GW JTLPS1.EM-JLJN-XX510-1-150-R33

GW JTLPS1.EM-JLJN-XX510-1-150-R33

DURIS E 2835 2200K

IPD30N06S223ATMA1

IPD30N06S223ATMA1

MOSFET N-CH 55V 30A TO252-3

IPD30N06S223ATMA1

IPD30N06S223ATMA1

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Part No :

IPD30N06S223ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 30A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
45000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPD30N06S223ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:901 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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