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PSMN7R8-120ESQ

PSMN7R8-120ESQ

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Part No :

PSMN7R8-120ESQ

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10430 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
PSMN7R8-120ESQ PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:167 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9.473 pF @ 60 V
FET Feature:-
Power Dissipation (Max):349W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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