CAP FILM 0.33UF 5% 100VDC RADIAL
MOSFET N-CH 700V 43.3A TO247-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 700 V |
Current - Continuous Drain (Id) @ 25°C: | 43.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 80mOhm @ 17.6A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1.76mA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5030 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 391W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFB3206PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO220AB |
|
FDP6676SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BFL4001Rochester Electronics |
MOSFET N-CH 900V 4.1A TO220FI |
|
STD5N95K3STMicroelectronics |
MOSFET N-CH 950V 4A DPAK |
|
PMV30XN,215Rochester Electronics |
MOSFET N-CH 20V 3.2A TO236AB |
|
RM8N650HDRectron USA |
MOSFET N-CHANNEL 650V 8A TO263-2 |
|
IPD85P04P4L06ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 85A TO252-3 |
|
SQD40061EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 100A TO252AA |
|
APT8030JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 800V 25A ISOTOP |
|
NVBG020N090SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 900V 9.8A/112A D2PAK |
|
BSZ120P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 11A/40A 8TSDSON |
|
2SK3140-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMC2523PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 3A 8MLP |