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NVBG020N090SC1

NVBG020N090SC1

SICFET N-CH 900V 9.8A/112A D2PAK

NVBG020N090SC1

NVBG020N090SC1

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Part No :

NVBG020N090SC1

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
SICFET N-CH 900V 9.8A/112A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11583 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id:4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 15 V
Vgs (Max):+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds:4415 pF @ 450 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 477W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
NVBG020N090SC1 is available at GangBo-ic.com, Please review product page below for detailed information, including NVBG020N090SC1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVBG020N090SC1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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