Type | Description |
---|---|
Series: | QFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 270 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-MLP (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STW15N95K5STMicroelectronics |
MOSFET N-CH 950V 12A TO247 |
|
SQM90142E_GE3Vishay / Siliconix |
MOSFET N-CH 200V 95A TO263 |
|
TPCA8057-H,LQ(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 42A 8SOP |
|
NTD23N03R-001Rochester Electronics |
MOSFET N-CH 25V 3.8A IPAK |
|
STD20NF06LAGSTMicroelectronics |
MOSFET N-CHANNEL 60V 24A DPAK |
|
TBB1002BMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
VN2460N3-G-P014Roving Networks / Microchip Technology |
MOSFET N-CH 600V 160MA TO92-3 |
|
SIRC04DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
BSC014N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A/100A TDSON7 |
|
TSM60N900CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4.5A TO252 |
|
STP9NK70ZFPSTMicroelectronics |
MOSFET N-CH 700V 7.5A TO220FP |
|
STD10NM60NDSTMicroelectronics |
MOSFET N-CH 600V 8A DPAK |
|
IRLS3813TRLPBFRochester Electronics |
IRLS3813 - 12V-300V N-CHANNEL PO |