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IPD85P04P4L06ATMA1

IPD85P04P4L06ATMA1

MOSFET P-CH 40V 85A TO252-3

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IPD85P04P4L06ATMA1

IPD85P04P4L06ATMA1

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Part No :

IPD85P04P4L06ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 40V 85A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
628862 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPD85P04P4L06ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 85A, 10V
Vgs(th) (Max) @ Id:2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:6580 pF @ 25 V
FET Feature:-
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD85P04P4L06ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD85P04P4L06ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD85P04P4L06ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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